Nambari ya Sehemu :
IPB65R095C7ATMA2
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH TO263-3
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
24A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
95 mOhm @ 11.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 590µA
Malango ya Lango (Qg) (Max) @ Vgs :
45nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2140pF @ 400V
Kuondoa Nguvu (Max) :
128W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO263-3
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB