Nambari ya Sehemu :
FDB1D7N10CL7
Mzalishaji :
ON Semiconductor
Maelezo :
FET 100V 1.7 MOHM D2PAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
268A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6V, 15V
Njia ya Kutumia (Max) @ Id, Vgs :
1.65 mOhm @ 100A, 15V
Vgs (th) (Max) @ Id :
4V @ 700µA
Malango ya Lango (Qg) (Max) @ Vgs :
163nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
11600pF @ 50V
Kuondoa Nguvu (Max) :
250W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D²PAK (TO-263)
Kifurushi / Kesi :
TO-263-7, D²Pak (6 Leads + Tab)