IPI041N12N3GAKSA1 Bei (USD) [27238pcs Hisa]
- 1 pcs$1.51311
- 500 pcs$1.38822
- Nambari ya Sehemu:
- IPI041N12N3GAKSA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 120V 120A TO262-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - RF, Thyristors - DIAC, SIDAC, Moduli za Dereva za Nguvu, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPI041N12N3GAKSA1 electronic components. IPI041N12N3GAKSA1 can be shipped within 24 hours after order. If you have any demands for IPI041N12N3GAKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI041N12N3GAKSA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPI041N12N3GAKSA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 120V 120A TO262-3
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
120V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
4.1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 270µA
Malango ya Lango (Qg) (Max) @ Vgs :
211nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
13800pF @ 60V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
300W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO262-3
Kifurushi / Kesi :
TO-262-3 Long Leads, I²Pak, TO-262AA
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