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  1. Nyumbani
  2. Bidhaa
  3. DRAM
  4. LPDDR4
  5. K4F6E3D4HB-MHCJ

Samsung Semiconductor - K4F6E3D4HB-MHCJ

KEY Part #: K7359765

[21953pcs Hisa]

    Nambari ya Sehemu:
    K4F6E3D4HB-MHCJ
    Mzalishaji:
    Samsung Semiconductor
    Maelezo ya kina:
    16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: DDR4, MODULE, LPDDR4X, DDR3, GDDR6, LPDDR4, HBM Flarebolt and SLC Nand ...
    Faida ya Ushindani:
    We specialize in Samsung Semiconductor K4F6E3D4HB-MHCJ electronic components. K4F6E3D4HB-MHCJ can be shipped within 24 hours after order. If you have any demands for K4F6E3D4HB-MHCJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4F6E3D4HB-MHCJ Sifa za Bidhaa

    Nambari ya Sehemu : K4F6E3D4HB-MHCJ
    Mzalishaji : Samsung Semiconductor
    Maelezo : 16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    Mfululizo : DDR3
    Density : 16 Gb
    Org. : x32
    kasi : 3733 Mbps
    voltage : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 105 °C
    mfuko : 200FBGA
    Bidhaa Hali : Mass Production

    Habari mpya kabisa

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    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    How Will 5G Impact on Memory?
    Mass Production of Fifth-Generation V-NAND has Started
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    The future of NAND technology
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Unaweza pia Kuvutiwa Na
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      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

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