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  1. Nyumbani
  2. Bidhaa
  3. DRAM
  4. LPDDR4
  5. K4FBE3D4HM-GHCL

Samsung Semiconductor - K4FBE3D4HM-GHCL

KEY Part #: K7359775

[18364pcs Hisa]

    Nambari ya Sehemu:
    K4FBE3D4HM-GHCL
    Mzalishaji:
    Samsung Semiconductor
    Maelezo ya kina:
    32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: HBM Flarebolt, LPDDR5, LPDDR4X, GDDR5, SLC Nand, DDR4, LPDDR3 and DDR3 ...
    Faida ya Ushindani:
    We specialize in Samsung Semiconductor K4FBE3D4HM-GHCL electronic components. K4FBE3D4HM-GHCL can be shipped within 24 hours after order. If you have any demands for K4FBE3D4HM-GHCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4FBE3D4HM-GHCL Sifa za Bidhaa

    Nambari ya Sehemu : K4FBE3D4HM-GHCL
    Mzalishaji : Samsung Semiconductor
    Maelezo : 32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    Mfululizo : DDR3
    Density : 32 Gb
    Org. : x32
    kasi : 4266 Mbps
    voltage : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 105 °C
    mfuko : 200FBGA
    Bidhaa Hali : Mass Production

    Habari mpya kabisa

    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Unlocking the Power of Cloud Computing
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Inside the building blocks of the 5G future
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Unaweza pia Kuvutiwa Na
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    • M392A4K40BM0-CRC

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