Samsung Semiconductor - K4F2E3S4HM-MHCJ

KEY Part #: K7359760

[23219pcs Hisa]


    Nambari ya Sehemu:
    K4F2E3S4HM-MHCJ
    Mzalishaji:
    Samsung Semiconductor
    Maelezo ya kina:
    12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: SLC Nand, GDDR5, DDR4, DDR3, MODULE, GDDR6, LPDDR5 and HBM Aquabolt ...
    Faida ya Ushindani:
    We specialize in Samsung Semiconductor K4F2E3S4HM-MHCJ electronic components. K4F2E3S4HM-MHCJ can be shipped within 24 hours after order. If you have any demands for K4F2E3S4HM-MHCJ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4F2E3S4HM-MHCJ Sifa za Bidhaa

    Nambari ya Sehemu : K4F2E3S4HM-MHCJ
    Mzalishaji : Samsung Semiconductor
    Maelezo : 12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    Mfululizo : DDR3
    Density : 12 Gb
    Org. : x32
    kasi : 3733 Mbps
    voltage : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 105 °C
    mfuko : 200FBGA
    Bidhaa Hali : Mass Production

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