RS1E170GNTB Bei (USD) [430974pcs Hisa]
- 1 pcs$0.09488
- 2,500 pcs$0.09441
- Nambari ya Sehemu:
- RS1E170GNTB
- Mzalishaji:
- Rohm Semiconductor
- Maelezo ya kina:
- MOSFET N-CH 30V 17A 8-HSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Viwango - Bridge Rectifiers, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC, Thyristors - SCRs - Moduli, Transistors - Ushirikiano uliopangwa and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in Rohm Semiconductor RS1E170GNTB electronic components. RS1E170GNTB can be shipped within 24 hours after order. If you have any demands for RS1E170GNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1E170GNTB Sifa za Bidhaa
Nambari ya Sehemu :
RS1E170GNTB
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET N-CH 30V 17A 8-HSOP
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
17A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
6.7 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
720pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3W (Ta), 23.7W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-HSOP
Kifurushi / Kesi :
8-PowerTDFN
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