IXTA3N100D2HV Bei (USD) [31249pcs Hisa]
- 1 pcs$1.31884
- Nambari ya Sehemu:
- IXTA3N100D2HV
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Arrays, Transistors - JFETs, Transistors - Ushirikiano uliopangwa, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
- Faida ya Ushindani:
- We specialize in IXYS IXTA3N100D2HV electronic components. IXTA3N100D2HV can be shipped within 24 hours after order. If you have any demands for IXTA3N100D2HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA3N100D2HV Sifa za Bidhaa
Nambari ya Sehemu :
IXTA3N100D2HV
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3A (Tj)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
0V
Njia ya Kutumia (Max) @ Id, Vgs :
6 Ohm @ 1.5A, 0V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
37.5nC @ 5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1020pF @ 25V
Makala ya FET :
Depletion Mode
Kuondoa Nguvu (Max) :
125W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-263HV
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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