Vishay Semiconductor Diodes Division - VS-8EWF12S-M3

KEY Part #: K6453121

VS-8EWF12S-M3 Bei (USD) [26568pcs Hisa]

  • 1 pcs$1.49838
  • 10 pcs$1.34546
  • 25 pcs$1.27204
  • 100 pcs$1.04592
  • 250 pcs$0.99230
  • 500 pcs$0.89039
  • 1,000 pcs$0.75093
  • 2,500 pcs$0.71517

Nambari ya Sehemu:
VS-8EWF12S-M3
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 1.2KV 8A TO252. Rectifiers 8A 1200V Single Die
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Arrays and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division VS-8EWF12S-M3 electronic components. VS-8EWF12S-M3 can be shipped within 24 hours after order. If you have any demands for VS-8EWF12S-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-8EWF12S-M3 Sifa za Bidhaa

Nambari ya Sehemu : VS-8EWF12S-M3
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 1.2KV 8A TO252
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Sasa - Wastani Aliyerekebishwa (Io) : 8A
Voltage - Mbele (Vf) (Max) @ Kama : 1.3V @ 8A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 270ns
Sasa - Rejea kuvuja @ Vr : 100µA @ 1200V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji : TO-252, (D-Pak)
Joto la Kufanya kazi - Junction : -40°C ~ 150°C

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