IXFH10N100Q Bei (USD) [7934pcs Hisa]
- 1 pcs$6.00237
- 30 pcs$5.97251
- Nambari ya Sehemu:
- IXFH10N100Q
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 1000V 10A TO-247AD.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - RF, Viwango - RF, Transistors - FET, MOSFETs - RF, Transistors - FET, MOSFETs - Arrays, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moja and Thyristors - SCR ...
- Faida ya Ushindani:
- We specialize in IXYS IXFH10N100Q electronic components. IXFH10N100Q can be shipped within 24 hours after order. If you have any demands for IXFH10N100Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH10N100Q Sifa za Bidhaa
Nambari ya Sehemu :
IXFH10N100Q
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 1000V 10A TO-247AD
Mfululizo :
HiPerFET™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.2 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Malango ya Lango (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4000pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
300W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-247AD (IXFH)
Kifurushi / Kesi :
TO-247-3
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