Infineon Technologies - IPW60R190E6FKSA1

KEY Part #: K6398973

IPW60R190E6FKSA1 Bei (USD) [22533pcs Hisa]

  • 1 pcs$1.82891

Nambari ya Sehemu:
IPW60R190E6FKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 600V 20.2A TO247.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Thyristors - SCR, Viwango - Rectifiers - Arrays, Transistors - JFETs, Transistors - FET, MOSFETs - Arrays, Thyristors - DIAC, SIDAC and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPW60R190E6FKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPW60R190E6FKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 600V 20.2A TO247
Mfululizo : CoolMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 20.2A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 190 mOhm @ 9.5A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 630µA
Malango ya Lango (Qg) (Max) @ Vgs : 63nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1400pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 151W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO247-3
Kifurushi / Kesi : TO-247-3

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