IXFQ12N80P Bei (USD) [26643pcs Hisa]
- 1 pcs$1.71005
- 30 pcs$1.70154
- Nambari ya Sehemu:
- IXFQ12N80P
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 800V 12A TO-3P.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - RF, Transistors - Bipolar (BJT) - Kufika and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in IXYS IXFQ12N80P electronic components. IXFQ12N80P can be shipped within 24 hours after order. If you have any demands for IXFQ12N80P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFQ12N80P Sifa za Bidhaa
Nambari ya Sehemu :
IXFQ12N80P
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 800V 12A TO-3P
Mfululizo :
HiPerFET™, PolarHT™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
850 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 2.5mA
Malango ya Lango (Qg) (Max) @ Vgs :
51nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2800pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
360W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-3P
Kifurushi / Kesi :
TO-3P-3, SC-65-3
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