NXP USA Inc. - BUK7Y35-55B,115

KEY Part #: K6412850

[13303pcs Hisa]


    Nambari ya Sehemu:
    BUK7Y35-55B,115
    Mzalishaji:
    NXP USA Inc.
    Maelezo ya kina:
    MOSFET N-CH 55V 28.43A LFPAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Thyristors - TRIAC, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Arrays, Transistors - JFETs, Transistors - IGBTs - Moja and Viwango - RF ...
    Faida ya Ushindani:
    We specialize in NXP USA Inc. BUK7Y35-55B,115 electronic components. BUK7Y35-55B,115 can be shipped within 24 hours after order. If you have any demands for BUK7Y35-55B,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BUK7Y35-55B,115 Sifa za Bidhaa

    Nambari ya Sehemu : BUK7Y35-55B,115
    Mzalishaji : NXP USA Inc.
    Maelezo : MOSFET N-CH 55V 28.43A LFPAK
    Mfululizo : TrenchMOS™
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 55V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 28.43A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 35 mOhm @ 15A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : 13.1nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 781pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 60W (Tc)
    Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : LFPAK56, Power-SO8
    Kifurushi / Kesi : SC-100, SOT-669

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