PHD9NQ20T,118 Bei (USD) [246005pcs Hisa]
- 1 pcs$0.17909
- 10,000 pcs$0.17820
- Nambari ya Sehemu:
- PHD9NQ20T,118
- Mzalishaji:
- Nexperia USA Inc.
- Maelezo ya kina:
- MOSFET N-CH 200V 8.7A DPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Arrays, Viwango - RF, Transistors - Kusudi Maalum, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Moja, Thyristors - SCRs - Moduli and Viwango - Zener - Moja ...
- Faida ya Ushindani:
- We specialize in Nexperia USA Inc. PHD9NQ20T,118 electronic components. PHD9NQ20T,118 can be shipped within 24 hours after order. If you have any demands for PHD9NQ20T,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHD9NQ20T,118 Sifa za Bidhaa
Nambari ya Sehemu :
PHD9NQ20T,118
Mzalishaji :
Nexperia USA Inc.
Maelezo :
MOSFET N-CH 200V 8.7A DPAK
Mfululizo :
TrenchMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8.7A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
400 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
959pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
88W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DPAK
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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