Nambari ya Sehemu :
FQU8P10TU
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET P-CH 100V 6.6A IPAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
530 mOhm @ 3.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
15nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
470pF @ 25V
Kuondoa Nguvu (Max) :
2.5W (Ta), 44W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
I-PAK
Kifurushi / Kesi :
TO-251-3 Short Leads, IPak, TO-251AA