IRFB812PBF Bei (USD) [188931pcs Hisa]
- 1 pcs$0.19577
- 1,000 pcs$0.18794
- Nambari ya Sehemu:
- IRFB812PBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N CH 500V 3.6A TO220AB.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Moduli za Dereva za Nguvu, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Ushirikiano uliopangwa, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - RF and Viwango - Zener - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRFB812PBF electronic components. IRFB812PBF can be shipped within 24 hours after order. If you have any demands for IRFB812PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB812PBF Sifa za Bidhaa
Nambari ya Sehemu :
IRFB812PBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N CH 500V 3.6A TO220AB
Mfululizo :
HEXFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
500V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
2.2 Ohm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
810pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
78W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220AB
Kifurushi / Kesi :
TO-220-3
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