Nexperia USA Inc. - PSMN4R3-100PS,127

KEY Part #: K6416343

PSMN4R3-100PS,127 Bei (USD) [30461pcs Hisa]

  • 1 pcs$1.35295
  • 10 pcs$1.22162
  • 100 pcs$0.93132
  • 500 pcs$0.72436
  • 1,000 pcs$0.60018

Nambari ya Sehemu:
PSMN4R3-100PS,127
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
MOSFET N-CH 100V 120A TO220AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Viwango - Zener - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN4R3-100PS,127 Sifa za Bidhaa

Nambari ya Sehemu : PSMN4R3-100PS,127
Mzalishaji : Nexperia USA Inc.
Maelezo : MOSFET N-CH 100V 120A TO220AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 4.3 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 170nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 9900pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 338W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220AB
Kifurushi / Kesi : TO-220-3