IXYS - IXFT30N60P

KEY Part #: K6394971

IXFT30N60P Bei (USD) [14810pcs Hisa]

  • 1 pcs$3.21592
  • 30 pcs$3.19992

Nambari ya Sehemu:
IXFT30N60P
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 600V 30A TO-268 D3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Thyristors - DIAC, SIDAC, Transistors - JFETs, Viwango - Bridge Rectifiers, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
We specialize in IXYS IXFT30N60P electronic components. IXFT30N60P can be shipped within 24 hours after order. If you have any demands for IXFT30N60P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFT30N60P Sifa za Bidhaa

Nambari ya Sehemu : IXFT30N60P
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 600V 30A TO-268 D3
Mfululizo : HiPerFET™, PolarHT™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 30A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 240 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 5V @ 4mA
Malango ya Lango (Qg) (Max) @ Vgs : 82nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4000pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 500W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-268
Kifurushi / Kesi : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA