Microsemi Corporation - APT1001R1BN

KEY Part #: K6412275

[8449pcs Hisa]


    Nambari ya Sehemu:
    APT1001R1BN
    Mzalishaji:
    Microsemi Corporation
    Maelezo ya kina:
    MOSFET N-CH 1000V 10.5A TO247AD.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Moja, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
    Faida ya Ushindani:
    We specialize in Microsemi Corporation APT1001R1BN electronic components. APT1001R1BN can be shipped within 24 hours after order. If you have any demands for APT1001R1BN, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APT1001R1BN Sifa za Bidhaa

    Nambari ya Sehemu : APT1001R1BN
    Mzalishaji : Microsemi Corporation
    Maelezo : MOSFET N-CH 1000V 10.5A TO247AD
    Mfululizo : POWER MOS IV®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 1000V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 10.5A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 1.1 Ohm @ 5.25A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : 130nC @ 10V
    Vgs (Max) : ±30V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 2950pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 310W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : TO-247AD
    Kifurushi / Kesi : TO-247-3