Infineon Technologies - IRLR3717PBF

KEY Part #: K6412202

IRLR3717PBF Bei (USD) [13526pcs Hisa]

  • 3,000 pcs$0.23406

Nambari ya Sehemu:
IRLR3717PBF
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 20V 120A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Moja, Transistors - Kusudi Maalum, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in Infineon Technologies IRLR3717PBF electronic components. IRLR3717PBF can be shipped within 24 hours after order. If you have any demands for IRLR3717PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLR3717PBF Sifa za Bidhaa

Nambari ya Sehemu : IRLR3717PBF
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 20V 120A DPAK
Mfululizo : HEXFET®
Hali ya Sehemu : Discontinued at Digi-Key
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 4 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.45V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 31nC @ 4.5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2830pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 89W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D-Pak
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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