SI3552DV-T1-GE3 Bei (USD) [262736pcs Hisa]
- 1 pcs$0.14078
- 3,000 pcs$0.13247
- Nambari ya Sehemu:
- SI3552DV-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N/P-CH 30V 6-TSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Ushirikiano uliopangwa, Thyristors - SCR, Transistors - FET, MOSFETs - RF, Transistors - FET, MOSFETs - Moja, Viwango - Bridge Rectifiers, Thyristors - TRIAC and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI3552DV-T1-GE3 electronic components. SI3552DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3552DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3552DV-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI3552DV-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N/P-CH 30V 6-TSOP
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
N and P-Channel
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
-
Njia ya Kutumia (Max) @ Id, Vgs :
105 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA (Min)
Malango ya Lango (Qg) (Max) @ Vgs :
3.2nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Nguvu - Max :
1.15W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-23-6 Thin, TSOT-23-6
Kifurushi cha Kifaa cha Mtoaji :
6-TSOP
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