Vishay Siliconix - SIHU7N60E-E3

KEY Part #: K6419154

SIHU7N60E-E3 Bei (USD) [94560pcs Hisa]

  • 1 pcs$0.41557
  • 3,000 pcs$0.41351

Nambari ya Sehemu:
SIHU7N60E-E3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 600V 7A TO-251.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Moja, Viwango - Zener - Arrays, Transistors - JFETs, Thyristors - TRIAC, Viwango - RF, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIHU7N60E-E3 electronic components. SIHU7N60E-E3 can be shipped within 24 hours after order. If you have any demands for SIHU7N60E-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHU7N60E-E3 Sifa za Bidhaa

Nambari ya Sehemu : SIHU7N60E-E3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 600V 7A TO-251
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 7A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 600 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 680pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 78W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-251
Kifurushi / Kesi : TO-251-3 Short Leads, IPak, TO-251AA