[2615pcs Hisa]
- Nambari ya Sehemu:
- GP1M006A065F
- Mzalishaji:
- Global Power Technologies Group
- Maelezo ya kina:
- MOSFET N-CH 650V 5.5A TO220F.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Kufika, Viwango - Bridge Rectifiers, Transistors - Kusudi Maalum and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
- Faida ya Ushindani:
- We specialize in Global Power Technologies Group GP1M006A065F electronic components. GP1M006A065F can be shipped within 24 hours after order. If you have any demands for GP1M006A065F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M006A065F Sifa za Bidhaa
Nambari ya Sehemu :
GP1M006A065F
Mzalishaji :
Global Power Technologies Group
Maelezo :
MOSFET N-CH 650V 5.5A TO220F
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.6 Ohm @ 2.75A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1177pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
39W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220F
Kifurushi / Kesi :
TO-220-3 Full Pack
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