[2639pcs Hisa]
- Nambari ya Sehemu:
- GP1M007A065CG
- Mzalishaji:
- Global Power Technologies Group
- Maelezo ya kina:
- MOSFET N-CH 650V 6.5A DPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - RF, Transistors - Kusudi Maalum, Viwango - Rectifiers - Arrays, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Global Power Technologies Group GP1M007A065CG electronic components. GP1M007A065CG can be shipped within 24 hours after order. If you have any demands for GP1M007A065CG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M007A065CG Sifa za Bidhaa
Nambari ya Sehemu :
GP1M007A065CG
Mzalishaji :
Global Power Technologies Group
Maelezo :
MOSFET N-CH 650V 6.5A DPAK
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.4 Ohm @ 3.25A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1201pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
120W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D-Pak
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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