DMN2055U-13 Bei (USD) [1112290pcs Hisa]
- 1 pcs$0.03325
- Nambari ya Sehemu:
- DMN2055U-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET BVDSS 8V-24V SOT23 TR 1.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Viwango - RF, Transistors - JFETs, Transistors - FET, MOSFETs - Moja, Thyristors - TRIAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN2055U-13 electronic components. DMN2055U-13 can be shipped within 24 hours after order. If you have any demands for DMN2055U-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2055U-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMN2055U-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET BVDSS 8V-24V SOT23 TR 1
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.8A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
38 mOhm @ 3.6A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
4.3nC @ 4.5V
Vgs (Max) :
±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
400pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
800mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
SOT-23
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
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