Vishay Siliconix - SI4922BDY-T1-GE3

KEY Part #: K6522983

SI4922BDY-T1-GE3 Bei (USD) [111328pcs Hisa]

  • 1 pcs$0.33224
  • 2,500 pcs$0.31128

Nambari ya Sehemu:
SI4922BDY-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2N-CH 30V 8A 8-SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Moja and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI4922BDY-T1-GE3 electronic components. SI4922BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4922BDY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4922BDY-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI4922BDY-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2N-CH 30V 8A 8-SOIC
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 8A
Njia ya Kutumia (Max) @ Id, Vgs : 16 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 1.8V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 62nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2070pF @ 15V
Nguvu - Max : 3.1W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji : 8-SO

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