Vishay Siliconix - SIS902DN-T1-GE3

KEY Part #: K6524070

[7564pcs Hisa]


    Nambari ya Sehemu:
    SIS902DN-T1-GE3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET 2N-CH 75V 4A PPAK 1212-8.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - TRIAC, Viwango - Bridge Rectifiers, Viwango - Zener - Moja, Transistors - FET, MOSFETs - Moja, Transistors - Kusudi Maalum and Transistors - IGBTs - Arrays ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SIS902DN-T1-GE3 electronic components. SIS902DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS902DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIS902DN-T1-GE3 Sifa za Bidhaa

    Nambari ya Sehemu : SIS902DN-T1-GE3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET 2N-CH 75V 4A PPAK 1212-8
    Mfululizo : TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 N-Channel (Dual)
    Makala ya FET : Standard
    Kukata kwa Voltage Voltage (Vdss) : 75V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4A
    Njia ya Kutumia (Max) @ Id, Vgs : 186 mOhm @ 3A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 6nC @ 10V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 175pF @ 38V
    Nguvu - Max : 15.4W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : PowerPAK® 1212-8 Dual
    Kifurushi cha Kifaa cha Mtoaji : PowerPAK® 1212-8 Dual