Taiwan Semiconductor Corporation - TSM60N600CI C0G

KEY Part #: K6419311

TSM60N600CI C0G Bei (USD) [104490pcs Hisa]

  • 1 pcs$0.37421

Nambari ya Sehemu:
TSM60N600CI C0G
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
MOSFET N-CHANNEL 600V 8A ITO220.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Viwango - RF, Thyristors - SCR, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - Kusudi Maalum and Transistors - JFETs ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM60N600CI C0G Sifa za Bidhaa

Nambari ya Sehemu : TSM60N600CI C0G
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : MOSFET N-CHANNEL 600V 8A ITO220
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 600 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 743pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 83W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : ITO-220AB
Kifurushi / Kesi : TO-220-3 Full Pack, Isolated Tab

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