Diodes Incorporated - DMT69M8LSS-13

KEY Part #: K6402267

DMT69M8LSS-13 Bei (USD) [8795pcs Hisa]

  • 2,500 pcs$0.12616

Nambari ya Sehemu:
DMT69M8LSS-13
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET BVDSS 41V 60VSO-8TR2.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - Moja and Thyristors - SCR ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMT69M8LSS-13 electronic components. DMT69M8LSS-13 can be shipped within 24 hours after order. If you have any demands for DMT69M8LSS-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMT69M8LSS-13 Sifa za Bidhaa

Nambari ya Sehemu : DMT69M8LSS-13
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET BVDSS 41V 60VSO-8TR2
Mfululizo : -
Hali ya Sehemu : Obsolete
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9.8A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 12 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 33.5nC @ 10V
Vgs (Max) : ±16V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1925pF @ 30V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.25W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-SO
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)

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