[12770pcs Hisa]
- Nambari ya Sehemu:
- IRF9Z24NSTRL
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET P-CH 55V 12A D2PAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCRs - Moduli, Transistors - JFETs, Transistors - FET, MOSFETs - RF and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF9Z24NSTRL electronic components. IRF9Z24NSTRL can be shipped within 24 hours after order. If you have any demands for IRF9Z24NSTRL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9Z24NSTRL Sifa za Bidhaa
Nambari ya Sehemu :
IRF9Z24NSTRL
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET P-CH 55V 12A D2PAK
Mfululizo :
HEXFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
55V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
175 mOhm @ 7.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
350pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.8W (Ta), 45W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D2PAK
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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