Diodes Incorporated - DMN2011UFDF-13

KEY Part #: K6396010

DMN2011UFDF-13 Bei (USD) [555022pcs Hisa]

  • 1 pcs$0.06664
  • 10,000 pcs$0.05873

Nambari ya Sehemu:
DMN2011UFDF-13
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CH 20V 14.2A UDFN2020-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2011UFDF-13 Sifa za Bidhaa

Nambari ya Sehemu : DMN2011UFDF-13
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CH 20V 14.2A UDFN2020-6
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 14.2A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 9.5 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2248pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.1W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : U-DFN2020-6 (Type F)
Kifurushi / Kesi : 6-UDFN Exposed Pad