Diodes Incorporated - DMN6068SE-13

KEY Part #: K6418835

DMN6068SE-13 Bei (USD) [377634pcs Hisa]

  • 1 pcs$0.09795
  • 4,000 pcs$0.08766

Nambari ya Sehemu:
DMN6068SE-13
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CH 60V 4.1A SOT223.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Arrays, Thyristors - TRIAC and Viwango - Zener - Moja ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN6068SE-13 electronic components. DMN6068SE-13 can be shipped within 24 hours after order. If you have any demands for DMN6068SE-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN6068SE-13 Sifa za Bidhaa

Nambari ya Sehemu : DMN6068SE-13
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CH 60V 4.1A SOT223
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.1A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 68 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 10.3nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 502pF @ 30V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-223
Kifurushi / Kesi : TO-261-4, TO-261AA

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