ON Semiconductor - 2N7002ET1G

KEY Part #: K6421463

2N7002ET1G Bei (USD) [2578478pcs Hisa]

  • 1 pcs$0.01434
  • 3,000 pcs$0.01054

Nambari ya Sehemu:
2N7002ET1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 60V 260MA SOT-23.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Bridge Rectifiers and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in ON Semiconductor 2N7002ET1G electronic components. 2N7002ET1G can be shipped within 24 hours after order. If you have any demands for 2N7002ET1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2N7002ET1G Sifa za Bidhaa

Nambari ya Sehemu : 2N7002ET1G
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 60V 260MA SOT-23
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 260mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2.5 Ohm @ 240mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 0.81nC @ 5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 26.7pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 300mW (Tj)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23-3 (TO-236)
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3