[79pcs Hisa]
- Nambari ya Sehemu:
- IRF6646TR1PBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 80V 12A DIRECTFET.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Viwango - Zener - Arrays, Transistors - IGBTs - Moduli, Transistors - Kusudi Maalum, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Moja and Transistors - IGBTs - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF6646TR1PBF electronic components. IRF6646TR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6646TR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6646TR1PBF Sifa za Bidhaa
Nambari ya Sehemu :
IRF6646TR1PBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 80V 12A DIRECTFET
Mfululizo :
HEXFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12A (Ta), 68A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
9.5 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
4.9V @ 150µA
Malango ya Lango (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2060pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.8W (Ta), 89W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DIRECTFET™ MN
Kifurushi / Kesi :
DirectFET™ Isometric MN
Habari mpya kabisa
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