IXYS - IXFN120N65X2

KEY Part #: K6395031

IXFN120N65X2 Bei (USD) [3344pcs Hisa]

  • 1 pcs$14.25111
  • 10 pcs$13.18042
  • 100 pcs$11.25689

Nambari ya Sehemu:
IXFN120N65X2
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 650V 108A SOT-227.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - TRIAC, Transistors - JFETs, Transistors - FET, MOSFETs - Moja, Thyristors - SCR and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
We specialize in IXYS IXFN120N65X2 electronic components. IXFN120N65X2 can be shipped within 24 hours after order. If you have any demands for IXFN120N65X2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN120N65X2 Sifa za Bidhaa

Nambari ya Sehemu : IXFN120N65X2
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 650V 108A SOT-227
Mfululizo : HiPerFET™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 108A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 24 mOhm @ 54A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 8mA
Malango ya Lango (Qg) (Max) @ Vgs : 225nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 15500pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 890W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-227B
Kifurushi / Kesi : SOT-227-4, miniBLOC