IPB65R190C6ATMA1 Bei (USD) [1963pcs Hisa]
- 1,000 pcs$0.67452
- Nambari ya Sehemu:
- IPB65R190C6ATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 650V 20.2A TO263.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Ushirikiano uliopangwa, Thyristors - TRIAC, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - Kusudi Maalum ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPB65R190C6ATMA1 electronic components. IPB65R190C6ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB65R190C6ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB65R190C6ATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPB65R190C6ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 650V 20.2A TO263
Mfululizo :
CoolMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
20.2A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 730µA
Malango ya Lango (Qg) (Max) @ Vgs :
73nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1620pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
151W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D²PAK (TO-263AB)
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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