[2746pcs Hisa]
- Nambari ya Sehemu:
- IPD60R600CPATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 600V 6.1A TO-252.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR, Transistors - IGBTs - Moduli and Thyristors - SCRs - Moduli ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPD60R600CPATMA1 electronic components. IPD60R600CPATMA1 can be shipped within 24 hours after order. If you have any demands for IPD60R600CPATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD60R600CPATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPD60R600CPATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 600V 6.1A TO-252
Mfululizo :
CoolMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6.1A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
600 mOhm @ 3.3A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 220µA
Malango ya Lango (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
550pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
60W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO252-3
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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