Toshiba Semiconductor and Storage - TPN3300ANH,LQ

KEY Part #: K6411648

TPN3300ANH,LQ Bei (USD) [274457pcs Hisa]

  • 1 pcs$0.14899
  • 3,000 pcs$0.14825

Nambari ya Sehemu:
TPN3300ANH,LQ
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
MOSFET N-CH 100V 9.4A 8TSON.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moduli and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage TPN3300ANH,LQ electronic components. TPN3300ANH,LQ can be shipped within 24 hours after order. If you have any demands for TPN3300ANH,LQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPN3300ANH,LQ Sifa za Bidhaa

Nambari ya Sehemu : TPN3300ANH,LQ
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : MOSFET N-CH 100V 9.4A 8TSON
Mfululizo : U-MOSVIII-H
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9.4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 33 mOhm @ 4.7A, 10V
Vgs (th) (Max) @ Id : 4V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 880pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 700mW (Ta), 27W (Tc)
Joto la Kufanya kazi : 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-TSON Advance (3.3x3.3)
Kifurushi / Kesi : 8-PowerVDFN

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