Vishay Siliconix - SIE822DF-T1-E3

KEY Part #: K6408567

SIE822DF-T1-E3 Bei (USD) [583pcs Hisa]

  • 3,000 pcs$0.58983

Nambari ya Sehemu:
SIE822DF-T1-E3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 20V 50A 10-POLARPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Thyristors - SCRs - Moduli, Moduli za Dereva za Nguvu, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIE822DF-T1-E3 electronic components. SIE822DF-T1-E3 can be shipped within 24 hours after order. If you have any demands for SIE822DF-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIE822DF-T1-E3 Sifa za Bidhaa

Nambari ya Sehemu : SIE822DF-T1-E3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 20V 50A 10-POLARPAK
Mfululizo : TrenchFET®
Hali ya Sehemu : Obsolete
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 50A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3.4 mOhm @ 18.3A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 78nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4200pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 5.2W (Ta), 104W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 10-PolarPAK® (S)
Kifurushi / Kesi : 10-PolarPAK® (S)

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