SPB18P06PGATMA1 Bei (USD) [161296pcs Hisa]
- 1 pcs$0.22931
- Nambari ya Sehemu:
- SPB18P06PGATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET P-CH 60V 18.7A TO-263.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Transistors - IGBTs - Moja, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Arrays, Transistors - Ushirikiano uliopangwa, Moduli za Dereva za Nguvu, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies SPB18P06PGATMA1 electronic components. SPB18P06PGATMA1 can be shipped within 24 hours after order. If you have any demands for SPB18P06PGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB18P06PGATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
SPB18P06PGATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET P-CH 60V 18.7A TO-263
Mfululizo :
SIPMOS®
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
18.7A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
130 mOhm @ 13.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
860pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
81.1W (Ta)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D²PAK (TO-263AB)
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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