Diodes Incorporated - DMG4N65CTI

KEY Part #: K6396256

DMG4N65CTI Bei (USD) [76194pcs Hisa]

  • 1 pcs$0.41392
  • 50 pcs$0.30208
  • 100 pcs$0.26313
  • 500 pcs$0.19490
  • 1,000 pcs$0.15592

Nambari ya Sehemu:
DMG4N65CTI
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CH 650V 4A ITO-220AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - RF, Viwango - RF and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMG4N65CTI electronic components. DMG4N65CTI can be shipped within 24 hours after order. If you have any demands for DMG4N65CTI, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG4N65CTI Sifa za Bidhaa

Nambari ya Sehemu : DMG4N65CTI
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CH 650V 4A ITO-220AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 13.5nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 900pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 8.35W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : ITO-220AB
Kifurushi / Kesi : TO-220-3 Full Pack, Isolated Tab