Vishay Siliconix - SQV120N10-3M8_GE3

KEY Part #: K6417897

SQV120N10-3M8_GE3 Bei (USD) [45191pcs Hisa]

  • 1 pcs$0.86522

Nambari ya Sehemu:
SQV120N10-3M8_GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 100V 120A TO262-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Moja, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Moja, Transistors - Kusudi Maalum, Transistors - JFETs and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SQV120N10-3M8_GE3 electronic components. SQV120N10-3M8_GE3 can be shipped within 24 hours after order. If you have any demands for SQV120N10-3M8_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQV120N10-3M8_GE3 Sifa za Bidhaa

Nambari ya Sehemu : SQV120N10-3M8_GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 100V 120A TO262-3
Mfululizo : Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 190nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 7230pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 250W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-262-3
Kifurushi / Kesi : TO-262-3 Long Leads, I²Pak, TO-262AA

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