STMicroelectronics - STD85N10F7AG

KEY Part #: K6419251

STD85N10F7AG Bei (USD) [99702pcs Hisa]

  • 1 pcs$0.39218
  • 2,500 pcs$0.32890

Nambari ya Sehemu:
STD85N10F7AG
Mzalishaji:
STMicroelectronics
Maelezo ya kina:
MOSFET N-CH 100V 70A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Transistors - JFETs, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STD85N10F7AG Sifa za Bidhaa

Nambari ya Sehemu : STD85N10F7AG
Mzalishaji : STMicroelectronics
Maelezo : MOSFET N-CH 100V 70A DPAK
Mfululizo : Automotive, AEC-Q101, STripFET™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 70A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 10 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3100pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 85W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DPAK
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63