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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - FET, MOSFETs - Moja
  5. FDP8D5N10C

ON Semiconductor - FDP8D5N10C

KEY Part #: K6392659

FDP8D5N10C Bei (USD) [39860pcs Hisa]

  • 1 pcs$0.98092
Nambari ya Sehemu:
FDP8D5N10C
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
FET ENGR DEV-NOT REL.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Moja and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDP8D5N10C electronic components. FDP8D5N10C can be shipped within 24 hours after order. If you have any demands for FDP8D5N10C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDP8D5N10C Sifa za Bidhaa

Nambari ya Sehemu : FDP8D5N10C
Mzalishaji : ON Semiconductor
Maelezo : FET ENGR DEV-NOT REL
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 76A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 8.5 mOhm @ 76A, 10V
Vgs (th) (Max) @ Id : 4V @ 130µA
Malango ya Lango (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2475pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.4W (Ta), 107W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220-3
Kifurushi / Kesi : TO-220-3

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