Nambari ya Sehemu :
FDMS4D0N12C
Mzalishaji :
ON Semiconductor
Maelezo :
PTNG 120V N-FET PQFN56
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
120V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
18.5A (Ta), 114A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
4 mOhm @ 67A, 10V
Vgs (th) (Max) @ Id :
4V @ 370A
Malango ya Lango (Qg) (Max) @ Vgs :
82nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
6460pF @ 60V
Kuondoa Nguvu (Max) :
2.7W (Ta), 106W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-PQFN (5x6)
Kifurushi / Kesi :
8-PowerTDFN