ON Semiconductor - FDMS4D0N12C

KEY Part #: K6397356

FDMS4D0N12C Bei (USD) [29645pcs Hisa]

  • 1 pcs$1.39026

Nambari ya Sehemu:
FDMS4D0N12C
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
PTNG 120V N-FET PQFN56.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Viwango - Rectifiers - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Arrays, Thyristors - SCR, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDMS4D0N12C electronic components. FDMS4D0N12C can be shipped within 24 hours after order. If you have any demands for FDMS4D0N12C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS4D0N12C Sifa za Bidhaa

Nambari ya Sehemu : FDMS4D0N12C
Mzalishaji : ON Semiconductor
Maelezo : PTNG 120V N-FET PQFN56
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 120V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 18.5A (Ta), 114A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 4 mOhm @ 67A, 10V
Vgs (th) (Max) @ Id : 4V @ 370A
Malango ya Lango (Qg) (Max) @ Vgs : 82nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 6460pF @ 60V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.7W (Ta), 106W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-PQFN (5x6)
Kifurushi / Kesi : 8-PowerTDFN

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