Vishay Siliconix - SI7655DN-T1-GE3

KEY Part #: K6404823

SI7655DN-T1-GE3 Bei (USD) [111328pcs Hisa]

  • 1 pcs$0.33224
  • 3,000 pcs$0.31128

Nambari ya Sehemu:
SI7655DN-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CH 20V 40A PPAK 1212.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - IGBTs - Moduli, Thyristors - DIAC, SIDAC, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - RF, Transistors - FET, MOSFETs - Moja and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI7655DN-T1-GE3 electronic components. SI7655DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7655DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7655DN-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI7655DN-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CH 20V 40A PPAK 1212
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 40A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3.6 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 1.1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 225nC @ 10V
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 6600pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 4.8W (Ta), 57W (Tc)
Joto la Kufanya kazi : -50°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® 1212-8S (3.3x3.3)
Kifurushi / Kesi : 8-PowerVDFN

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