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  1. Nyumbani
  2. Bidhaa
  3. DRAM
  4. DDR4
  5. K4A8G045WB-BCPB

Samsung Semiconductor - K4A8G045WB-BCPB

KEY Part #: K7359589

[16925pcs Hisa]

    Nambari ya Sehemu:
    K4A8G045WB-BCPB
    Mzalishaji:
    Samsung Semiconductor
    Maelezo ya kina:
    8 Gb 2G x 4 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: HBM Aquabolt, MODULE, LPDDR5, SLC Nand, HBM Flarebolt, DDR4, DDR3 and LPDDR4 ...
    Faida ya Ushindani:
    We specialize in Samsung Semiconductor K4A8G045WB-BCPB electronic components. K4A8G045WB-BCPB can be shipped within 24 hours after order. If you have any demands for K4A8G045WB-BCPB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G045WB-BCPB Sifa za Bidhaa

    Nambari ya Sehemu : K4A8G045WB-BCPB
    Mzalishaji : Samsung Semiconductor
    Maelezo : 8 Gb 2G x 4 2133 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production
    Mfululizo : DDR4
    Density : 8 Gb
    Org. : 2G x 4
    kasi : 2133 Mbps
    voltage : 1.2 V
    Temp. : 0 ~ 85 °C
    mfuko : 78FBGA
    Bidhaa Hali : Mass Production

    Habari mpya kabisa

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    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Inside the building blocks of the 5G future
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
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    Unaweza pia Kuvutiwa Na
    • K4A4G085WE-BIRC

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      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

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      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

    Sehemu za Moto