Samsung Semiconductor - K4A4G085WE-BITD

KEY Part #: K7359580

[20168pcs Hisa]


    Nambari ya Sehemu:
    K4A4G085WE-BITD
    Mzalishaji:
    Samsung Semiconductor
    Maelezo ya kina:
    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: GDDR5, HBM Flarebolt, MODULE, GDDR6, LPDDR3, LPDDR4X, LPDDR4 and SLC Nand ...
    Faida ya Ushindani:
    We specialize in Samsung Semiconductor K4A4G085WE-BITD electronic components. K4A4G085WE-BITD can be shipped within 24 hours after order. If you have any demands for K4A4G085WE-BITD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G085WE-BITD Sifa za Bidhaa

    Nambari ya Sehemu : K4A4G085WE-BITD
    Mzalishaji : Samsung Semiconductor
    Maelezo : 4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production
    Mfululizo : DDR4
    Density : 4 Gb
    Org. : 512M x 8
    kasi : 2666 Mbps
    voltage : 1.2 V
    Temp. : -40 ~ 95 °C
    mfuko : 78FBGA
    Bidhaa Hali : Mass Production

    Unaweza pia Kuvutiwa Na
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.