[14142pcs Hisa]
- Nambari ya Sehemu:
- K4A8G085WC-BIWE
- Mzalishaji:
- Samsung Semiconductor
- Maelezo ya kina:
- 8 Gb 1G x 8 3200 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: SLC Nand, GDDR6, LPDDR3, HBM Flarebolt, GDDR5, MODULE, DDR4 and LPDDR4X ...
- Faida ya Ushindani:
- We specialize in Samsung Semiconductor K4A8G085WC-BIWE electronic components. K4A8G085WC-BIWE can be shipped within 24 hours after order. If you have any demands for K4A8G085WC-BIWE, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
K4A8G085WC-BIWE Sifa za Bidhaa
Nambari ya Sehemu :
K4A8G085WC-BIWE
Mzalishaji :
Samsung Semiconductor
Maelezo :
8 Gb 1G x 8 3200 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production
Mfululizo :
DDR4
Density :
8 Gb
Org. :
1G x 8
kasi :
3200 Mbps
voltage :
1.2 V
Temp. :
-40 ~ 95 °C
mfuko :
78FBGA
Bidhaa Hali :
Mass Production
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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-
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K4A4G085WE-BITD
Samsung Semiconductor
4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.
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K4A4G085WF-BCTD
Samsung Semiconductor
4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
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K4A4G165WE-BCWE
Samsung Semiconductor
4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.