Diodes Incorporated - DDTC113TE-7-F

KEY Part #: K6527333

DDTC113TE-7-F Bei (USD) [1712846pcs Hisa]

  • 1 pcs$0.02159
  • 3,000 pcs$0.02001
  • 6,000 pcs$0.01740
  • 15,000 pcs$0.01479
  • 30,000 pcs$0.01392
  • 75,000 pcs$0.01305
  • 150,000 pcs$0.01131

Nambari ya Sehemu:
DDTC113TE-7-F
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
TRANS PREBIAS NPN 150MW SOT523.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum, Viwango - Zener - Arrays and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DDTC113TE-7-F electronic components. DDTC113TE-7-F can be shipped within 24 hours after order. If you have any demands for DDTC113TE-7-F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DDTC113TE-7-F Sifa za Bidhaa

Nambari ya Sehemu : DDTC113TE-7-F
Mzalishaji : Diodes Incorporated
Maelezo : TRANS PREBIAS NPN 150MW SOT523
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 1 kOhms
Upinzani - Base ya Emitter (R2) : -
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Sasa - Ushuru Mtoaji : 500nA (ICBO)
Mara kwa mara - Mpito : 250MHz
Nguvu - Max : 150mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SOT-523
Kifurushi cha Kifaa cha Mtoaji : SOT-523

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